<\/span><\/h2>\nIGBT l\u00e0 t\u00ean vi\u1ebft t\u1eaft c\u1ee7a Insulated Gate Bipolar Transistor. \u0110\u00e2y l\u00e0 m\u1ed9t linh ki\u1ec7n b\u00e1n d\u1eabn hi\u1ec7n \u0111\u1ea1i v\u1edbi ba c\u1ef1c, \u0111\u01b0\u1ee3c thi\u1ebft k\u1ebf \u0111\u1ec3 th\u1ef1c hi\u1ec7n vi\u1ec7c chuy\u1ec3n m\u1ea1ch nhanh ch\u00f3ng trong c\u00e1c thi\u1ebft b\u1ecb \u0111i\u1ec7n. V\u1edbi t\u00ednh n\u0103ng \u01b0u vi\u1ec7t, IGBT \u0111\u00e3 tr\u1edf th\u00e0nh m\u1ed9t thi\u1ebft b\u1ecb kh\u00f4ng th\u1ec3 thi\u1ebfu trong c\u00f4ng ngh\u1ec7 b\u00e1n d\u1eabn ng\u00e0y nay.<\/span><\/p>\n\u0110\u01b0\u1ee3c ph\u00e1t minh b\u1edfi Hans W. Beck v\u00e0 Carl F. Wheatley v\u00e0o n\u0103m 1982, IGBT k\u1ebft h\u1ee3p kh\u1ea3 n\u0103ng chuy\u1ec3n m\u1ea1ch nhanh c\u1ee7a MOSFET v\u1edbi kh\u1ea3 n\u0103ng ch\u1ecbu t\u1ea3i l\u1edbn c\u1ee7a Transistor truy\u1ec1n th\u1ed1ng. L\u00e0 m\u1ed9t ph\u1ea7n t\u1eed \u0111i\u1ec1u khi\u1ec3n b\u1eb1ng \u0111i\u1ec7n \u00e1p, IGBT y\u00eau c\u1ea7u c\u00f4ng su\u1ea5t \u0111i\u1ec1u khi\u1ec3n c\u1ef1c k\u1ef3 nh\u1ecf, gi\u00fap t\u1ed1i \u01b0u h\u00f3a hi\u1ec7u su\u1ea5t ho\u1ea1t \u0111\u1ed9ng trong nhi\u1ec1u \u1ee9ng d\u1ee5ng c\u00f4ng nghi\u1ec7p.<\/span><\/p>\n